A comparative study of interaction of end of range (EOR) defect band with upper buried oxide (BOX) interface for B and BF2 implants in SOI and bulk silicon with preamorphising implant" (2008)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Conference/Paper/Proceeding/Abstract
Volume: 1006