The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy (2011)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3605487
Publication URI: http://dx.doi.org/10.1063/1.3605487
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 1