Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon (2014)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4871538
Publication URI: http://dx.doi.org/10.1063/1.4871538
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 14