RP-CVD growth of high carbon content Si<inf>1−x</inf>C<inf>x</inf> epilayers using disilane and trimethylsilane precursors (2014)
Attributed to:
Creating Silicon Based Platforms for New Technologies
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/istdm.2014.6874653
Publication URI: http://dx.doi.org/10.1109/istdm.2014.6874653
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4799-5427-8