RP-CVD growth of high carbon content Si<inf>1&#x2212;x</inf>C<inf>x</inf> epilayers using disilane and trimethylsilane precursors (2014)

First Author: Myronov M
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/istdm.2014.6874653

Publication URI: http://dx.doi.org/10.1109/istdm.2014.6874653

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4799-5427-8