Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate (2014)
Attributed to:
Creating Silicon Based Platforms for New Technologies
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/istdm.2014.6874628
Publication URI: http://dx.doi.org/10.1109/istdm.2014.6874628
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4799-5427-8