Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2 (2014)

First Author: Wongwanitwattana C
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.4868615

Publication URI: http://dx.doi.org/10.1116/1.4868615

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Issue: 3