Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures. (2012)

First Author: Morris RJ
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/ac202929x

PubMed Identifier: 22296224

Publication URI: http://europepmc.org/abstract/MED/22296224

Type: Journal Article/Review

Volume: 84

Parent Publication: Analytical chemistry

Issue: 5

ISSN: 0003-2700