O 2 + probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si 0.4 Ge 0.6 /Ge quantum wells (2012)
Attributed to:
UK Silicon Photonics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/sia.4963
Publication URI: http://dx.doi.org/10.1002/sia.4963
Type: Journal Article/Review
Parent Publication: Surface and Interface Analysis
Issue: 1