New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology (2013)

First Author: Mironov O

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201300164

Publication URI: http://dx.doi.org/10.1002/pssc.201300164

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 1