Simulation of current collapse in the 0.25 µm gate Length Al0.28Ga0.72N/GaN HEMT (2012)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/miel.2012.6222842
Publication URI: http://dx.doi.org/10.1109/miel.2012.6222842
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4673-0237-1