Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET (2013)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2230313
Publication URI: http://dx.doi.org/10.1109/led.2012.2230313
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 2