The Effect of Temperature in a thin Si Nanowire Transistor, with a Single Donor in the Channel, using Dissipative Physics (2013)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1557/opl.2013.639
Publication URI: http://dx.doi.org/10.1557/opl.2013.639
Type: Journal Article/Review
Parent Publication: MRS Proceedings