Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET (2014)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2013.2294213
Publication URI: http://dx.doi.org/10.1109/ted.2013.2294213
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 2