Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET (2014)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/iwce.2014.6865877
Publication URI: http://dx.doi.org/10.1109/iwce.2014.6865877
Type: Conference/Paper/Proceeding/Abstract