Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy (2013)
Attributed to:
Far Infra-Red Emission and Lasing in Doped Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1134/s1063782613020048
Publication URI: http://dx.doi.org/10.1134/s1063782613020048
Type: Journal Article/Review
Parent Publication: Semiconductors
Issue: 2