Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process (2014)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tsm.2014.2336701
Publication URI: http://dx.doi.org/10.1109/tsm.2014.2336701
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Semiconductor Manufacturing
Issue: 3