Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride (2015)

First Author: Yu K

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

No abstract provided

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 38