Molecular beam epitaxy of free-standing wurtzite Al Ga1-N layers (2015)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.010
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.010
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth