Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers (2014)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2014.08.186
Publication URI: http://dx.doi.org/10.1016/j.apsusc.2014.08.186
Type: Journal Article/Review
Parent Publication: Applied Surface Science