Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors (2015)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2015.2433894
Publication URI: http://dx.doi.org/10.1109/led.2015.2433894
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 8