GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures. (2015)

First Author: Chen S

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1186/s11671-015-1049-2

PubMed Identifier: 26303141

Publication URI: http://europepmc.org/abstract/MED/26303141

Type: Journal Article/Review

Volume: 10

Parent Publication: Nanoscale research letters

Issue: 1

ISSN: 1556-276X