Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices (2014)

First Author: Garduño-Nolasco E

Attributed to: Dilute Nitride Type II Quantum Dot Materials for Solar Cells based on GaAs - Collaborative Research in Energy with South Africa funded by EPSRC

No abstract provided

Type: Journal Article/Review

Parent Publication: IET Optoelectronics

Issue: 2

ISSN: 1751-8768