Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold (2015)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1166/jolpe.2015.1371
Publication URI: http://dx.doi.org/10.1166/jolpe.2015.1371
Type: Journal Article/Review
Parent Publication: Journal of Low Power Electronics
Issue: 2