Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs (2016)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2516921
Publication URI: http://dx.doi.org/10.1109/ted.2016.2516921
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 3