The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model (2015)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/647/1/012065
Publication URI: http://dx.doi.org/10.1088/1742-6596/647/1/012065
Type: Journal Article/Review
Parent Publication: Journal of Physics: Conference Series