Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy (2013)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1080/14786435.2013.805272
Publication URI: http://dx.doi.org/10.1080/14786435.2013.805272
Type: Journal Article/Review
Parent Publication: Philosophical Magazine
Issue: 23
ISSN: 14786435