Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers (2011)

First Author: Majid M
Attributed to:  Strain engineered InAs/GaAs quantum dots for long wavelength emission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2011.2108270

Publication URI: http://dx.doi.org/10.1109/jstqe.2011.2108270

Type: Journal Article/Review

Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics

Issue: 5