Lifetime Reliability Analysis of Complementary Resistive Switches Under Threshold and Doping Interface Speed Variations (2015)

First Author: Li G
Attributed to:  Yield and reliability enhancement techniques for novel memory devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2014.2371928

Publication URI: http://dx.doi.org/10.1109/tnano.2014.2371928

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nanotechnology

Issue: 1