Novel Complementary Resistive Switch Crossbar Memory Write and Read Schemes (2015)

First Author: Yang Y
Attributed to:  Yield and reliability enhancement techniques for novel memory devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2015.2394450

Publication URI: http://dx.doi.org/10.1109/tnano.2015.2394450

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nanotechnology

Issue: 2