Dopant compensation in HfO2 and other high K oxides (2014)

First Author: Li H
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4878503

Publication URI: http://dx.doi.org/10.1063/1.4878503

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 19