Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors (2016)

First Author: Li H
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4941272

Publication URI: http://dx.doi.org/10.1063/1.4941272

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 5