AlN-GeO2 based gate stack for improved reliability of Ge MOSFETs (2015)

First Author: Li H
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2015.04.081

Publication URI: http://dx.doi.org/10.1016/j.mee.2015.04.081

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering