Ab initio calculations of materials selection of oxides for resistive random access memories (2015)

First Author: Guo Y
Attributed to:  Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2015.04.049

Publication URI: http://dx.doi.org/10.1016/j.mee.2015.04.049

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering