Planar InAs p-i-n photodiodes fabricated using ion implantation (2014)
Attributed to:
Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ipcon.2014.6995393
Publication URI: http://dx.doi.org/10.1109/ipcon.2014.6995393
Type: Conference/Paper/Proceeding/Abstract