Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire (2012)
Attributed to:
Many-body effects in quantized semiconductor electron accumulation layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.86.245315
Publication URI: http://dx.doi.org/10.1103/physrevb.86.245315
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 24