Thickness dependence of the strain, band gap and transport properties of epitaxial In 2 O 3 thin films grown on Y-stabilised ZrO 2 (111) (2011)
Attributed to:
Many-body effects in quantized semiconductor electron accumulation layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/23/33/334211
PubMed Identifier: 21813945
Publication URI: http://europepmc.org/abstract/MED/21813945
Type: Journal Article/Review
Parent Publication: Journal of Physics: Condensed Matter
Issue: 33
ISSN: 0953-8984