Analysis of surface defects in Si 1- y C y epilayers formed by the oversaturation of carbon (2015)

First Author: Colston G
Attributed to:  Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/30/11/114003

Publication URI: http://dx.doi.org/10.1088/0268-1242/30/11/114003

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 11