Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5) x (Al2O3)1- x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors (2016)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4939298
Publication URI: http://dx.doi.org/10.1063/1.4939298
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 2