Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. (2016)

First Author: Boland JL
Attributed to:  III-V Semiconductor Nanowires: Attaining Control over Doping and Heterointerfaces funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsnano.5b07579

PubMed Identifier: 26959350

Publication URI: http://europepmc.org/abstract/MED/26959350

Type: Journal Article/Review

Volume: 10

Parent Publication: ACS nano

Issue: 4

ISSN: 1936-0851