Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels (2016)

First Author: Georgiev V
Attributed to:  Engineering Quantum Technology Systems on a Silicon Platform funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/nmdc.2016.7777084

Publication URI: http://dx.doi.org/10.1109/nmdc.2016.7777084

Type: Conference/Paper/Proceeding/Abstract