Simulation study of scaled In 0.53 Ga 0.47 As and Si FinFETs for sub-16 nm technology nodes (2016)
Attributed to:
Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/31/7/075005
Publication URI: http://dx.doi.org/10.1088/0268-1242/31/7/075005
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 7
ISSN: 13616641