Understanding charge traps for optimizing Si-passivated Ge nMOSFETs (2016)

First Author: Ren P
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/vlsit.2016.7573367

Publication URI: http://dx.doi.org/10.1109/vlsit.2016.7573367

Type: Conference/Paper/Proceeding/Abstract