Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors (2013)

First Author: Liu W
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2013.2267541

Publication URI: http://dx.doi.org/10.1109/ted.2013.2267541

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8