Models of oxygen vacancy defects involved in degradation of gate dielectrics (2013)
Attributed to:
Non-equilibrium electron-ion dynamics in thin metal-oxide films
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/irps.2013.6532018
Publication URI: http://dx.doi.org/10.1109/irps.2013.6532018
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4799-0112-8