Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence (2015)

First Author: Brazzini T
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2015.09.023

Publication URI: http://dx.doi.org/10.1016/j.microrel.2015.09.023

Type: Journal Article/Review

Parent Publication: Microelectronics Reliability

Issue: 12