Lowest Surface Recombination in n-Type Oxidised Crystalline Silicon by Means of Extrinsic Field Effect Passivation (2016)
Attributed to:
Improved surface passivation for semiconductor solar cells
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Publication URI: http://www.eupvsec-proceedings.com/proceedings?paper=37887
Type: Conference/Paper/Proceeding/Abstract