Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer (2013)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.061002
Publication URI: http://dx.doi.org/10.7567/jjap.52.061002
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 6R
ISSN: 00214922