Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si (2016)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.667
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.667
Type: Journal Article/Review
Parent Publication: Materials Science Forum