High Temperature Nitridation of 4H-SiC MOSFETs (2016)

First Author: Rong H
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.623

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.623

Type: Journal Article/Review

Parent Publication: Materials Science Forum